基于SONOS工艺NAND闪存单元读取串扰的改善方法
首发时间:2018-06-20
摘要:通过研究和分析基于SONOS工艺的NOR型嵌入式闪存和NAND闪存的"读取"串扰现象,提出通过存储单元硅基体施加负偏压的方案来解决NAND闪存存在的"读"串扰问题,测试、分析结果表明采用在存储单元硅基体施加-1.5V偏压,并相应调整优化Vpass和Vread后,125℃、500小时读取操作后阈值电压窗口提升50%,改善了困扰SONOS NAND技术应用的"读取"串扰问题。该方案可以作为改善单层SONOS NAND存储器读取串扰问题和实现SONOS量产化的一种方法和途径。
关键词: 闪存 SONOS(硅/ 二氧化硅/ 氮化硅/ 二氧化硅/ 硅) 非易失性存储器 串扰
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An Improved Method of Read Disturb of NAND Flash Based on SONOS Technology
Abstract:In this paper, read disturb was studied and a new read operation solution was developed to suppress read disturb of SONOS NAND flash memory. The negative bulk bias could obviously reduce the gate disturb and improved threshold voltage window 50% after 500 hours read operation at 125℃. These properties indicate that SONOS cell technology developed in this work can be one of candidates for single-level NAND Flash memory with logic compatible process.
Keywords: Flash SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) Nonvolatile Memory Disturb
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