ZnO:Ga的制备及其在辐射探测上的应用研究现状
首发时间:2018-10-30
摘要:ZnO作为一种宽带隙直接跃迁半导体材料,具有较好的闪烁性能和较强的抗辐射特性,但同时还存在着严重的自吸收问题。在掺杂Ga元素后晶体具有极快的光衰减时间和较高的光输出,可作为超快闪烁探测器的闪烁体来探测X、γ射线、中子和带电粒子。本文首先介绍了ZnO晶体的基本性质、缺陷和发光机理等,然后总结和比较了ZnO体单晶和ZnO:Ga闪烁薄膜的制备方法,接着介绍了ZnO:Ga闪烁材料在辐射探测上的应用研究现状,最后总结了目前限制ZnO:Ga闪烁材料广泛应用的亟需解决的一些问题。
关键词: 核探测技术与核电子学 ZnO:Ga闪烁材料 ZnO单晶制备 ZnO:Ga薄膜制备 超快闪烁探测器
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Production of ZnO:Ga and the application research status in radiation detection
Abstract:As a wide band-gap and direct transition semiconductor material, ZnO has good scintillation performance and strong radiation resistance, but also has serious self-absorption phenomenon. It can be used as the scintillator of ultra-fast scintillation detectors to detect X-ray, gamma, neutron and charged particles with extremely fast light decay time and high light output when being doped with Ga element. In this paper, firstly, the basic properties, defects and luminescence mechanism of ZnO crystals are introduced. Then the production methods of bulk ZnO single crystals and ZnO:Ga scintillation films are summarized and compared. Thereafter, the application research status of ZnO:Ga scintillation materials in radiation detection are presented. Finally, it\'s concluded that some problems that limit the wide application of ZnO:Ga scintillation materials need to be solved.
Keywords: nuclear detection technology and nuclear electronics ZnO:Ga scintillation materials production of ZnO single crystals preparation of ZnO:Ga films ultra-fast scintillation detectors
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