The characterization of a BSI sCMOS as a soft X-ray detector
首发时间:2018-11-20
Abstract:We test a newly developed back-side illumination scientific CMOS (BSI sCMOS) device for X-ray imaging spectroscopy. This BSI sCMOS has an array of 2048*2048 pixels with 11 um pixel size and 3.6 um epitaxial thickness. It is an active pixel sensor with fast read-out, low power consumption, low readout noise and inherent radiation hardness. We have investigated the performances. The readout noise is 1.5 e- r.m.s. ENC with energy resolution of 187 eV (3.2%) at 5.9 keV at -20oC. The dark currents as a function of temperature were also measured. This BSI sCMOS would be a quite promising device for X-ray applications.
keywords: X-rays imaging detector scientific CMOS
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应用于X射线探测的科学级背照式CMOS的研究
摘要:近几年发展起来的科学级CMOS探测器,具有读出速度快、低噪声、低功耗、抗辐射能力强等特性,有望满足未来空间X射线探测的需求。为检验其性能并验证应用于空间X射线探测的可能性,我们于国内率先对科学级CMOS探测器的性能进行了研究,本文中的CMOS包含2048*2048个像素,像素大小为11*11um,其外延层厚度为3.6um。我们对其读出噪声和暗电流进行了测试,并利用55Fe放射源对其X射线响应和能量分辨率进行了研究,实验结果表明可以实现对X射线的探测。
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