Structure induced rectifying in RRAM arrays
首发时间:2019-02-20
Abstract:Resistor Random Access Memory (RRAM). The device has repeatable self-rectifying behavior with a high rectification ratio (104~105). The electrostatic effect caused by the asymmetric structure of the TaOx layer is responsible for the rectification behavior. This study helps to solve the sneak current problem in the RRAM array.
keywords: Ta oxide oxygen vacancy, array resistive memory
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