Beta-Ga2O3/ZnO薄膜异质结的整流特性和日盲光电响应
首发时间:2019-03-21
摘要:本文利用激光分子束外延技术(L-MBE),在蓝宝石衬底上沉积了垂直结构的beta-Ga2O3/ZnO异质结薄膜,并通过X射线衍射技术(XRD)对该异质结构进行了表征,同时对该薄膜进行了光电响应测试。制备出的beta-Ga2O3/ZnO异质结具有整流比超过105的优异的整流特性,且在日盲区有着非常显著的光电响应。在不施加电压(0V)的情况下,该异质结构制备的光电探测器展现出了自供电特性,且有着很快的响应速度(上升时间和衰减时间分别为0.035s和0.032s)。其优良的性能可能与异质结内部的自建电场驱使分离的光生电子空穴对有关。
关键词: beta-Ga2O3薄膜 ZnO薄膜 异质结 日盲探测器 自供能
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Rectifying characteristics and solar-blind photoresponse in Beta-Ga2O3/ZnO heterojunctions
Abstract:Heterojunctions composed of beta-Ga2O3 and ZnO films were fabricated on sapphire substrates using laser molecular beam epitaxy method. X-ray diffraction (XRD) was used to characterize the crystal structure and photoelectric response was measured. The heterojunction present excellent rectifying characteristic with an asymmetry ratio over 105. Prominent solar-blind photoresponse effect was also observed in the formed heterojunction. The photodetector exhibits a self-powered behavior with a fast response speed (rise/decay time: 0.035 s/ 0.032 s) at zero bias. The obtained high performance could be related to the build-in field driven photogenerated electron-hole separation.
Keywords: beta-Ga2O3 film ZnO film heterojunction solar blind photodetector self-powered
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