基于机械剥离Ga2O3/SiO2/Si结构的场效应晶体管的电学特性研究
首发时间:2019-05-08
摘要:通过机械剥离的方法,从氧化镓单晶衬底上获得氧化镓薄片并转移至二氧化硅/硅衬底上,制成了氧化镓背栅场效应晶体管。在器件的转移特性曲线中,阈值电压随着测量起始电压的变话而明显变化。在往复测量过程中,我们观察到了明显滞回特性。在-30V~30V测量中器件表现为常开型,而30V~-30V测量时表现为耗尽型,阈值电压漂移高达30 V。同时在无栅压时的直流电流-电压特性的测量中,器件表现出了明显的饱和电流不稳定性。多次测量所得饱和电流有较大区别,在单次测量过程中也可能突然出现电流跳变现象。。
For information in English, please click here
Electrical properties of Ga2O3/SiO2/Si feild effect transistor
Abstract:β-gallium oxide thin film was exfoliated from single crystal gallium oxide bulk by mechanical method and transferred to silicon oxide/Si substrate, and then gallium oxide on silicon oxide metal oxide field effect transistor (MOSFET) was fabricated. Electrical characterization of the MOSFET shows an instability of the threshold voltage. The threshold voltage shifts with the change of the starting of gate voltage sweeping scale. A hysteresis was observed in the -30 V to 30 V dual sweep transport curves. The -30 V to 30 V test curve shows a D-mode FET property, while the 30 V to -30 V curve shows an E-mode FET property. The shift of threshold voltage of forward and reverse curve is more than 40 V. A instability of source to drain current in I-V curve were also noticed.
Keywords: MOSFET threshold voltage instability current instability
基金:
引用
No.****
同行评议
勘误表
基于机械剥离Ga2O3/SiO2/Si结构的场效应晶体管的电学特性研究
评论
全部评论0/1000