硅介质材料的等离子刻蚀选择比研究
首发时间:2019-11-08
摘要:本文研究了一种基于电感耦合型高密度等离子体刻蚀设备的硅介质材料刻蚀工艺,刻蚀气体使用CHF3、CH2F2和O2的混合气体。实验数据表明,通过控制上述三种刻蚀气体的总流量或气体比例,可以控制刻蚀工艺对不同硅介质材料(氮化硅和氧化硅)的刻蚀速率以及刻蚀选择比。这种刻蚀工艺技术具有氧化硅刻蚀选择比可控的特点,氮化硅/氧化硅材料的刻蚀选择比可达到10。
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Plasma Etching Selectivity of Silicon Dielectric Material
Abstract:Inductively coupled plasma (ICP) etching of silicon nitride and silicon oxide is investigated using CHF3, CH2F2 and O2 gases based on a high plasma density etching tool. By tuning total gas flow or ratio of the CHF3, CH2F2 and O2 gases, etching selectivity of silicon nitride over silicon dioxide can be controlled. The silicon nitride over silicon dioxide etching selectivity can be larger than 10.
Keywords: Plasma Etching Silicon Dielectric Etching Selectivity
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硅介质材料的等离子刻蚀选择比研究
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