二维β-Ga2O3纳米片的制备与表征
首发时间:2021-03-24
摘要:本文通过在含有微量氧的氩气中热蒸发镓,先获得了Ga2O3晶体,再利用特殊的收集方法,得到了Ga2O3纳米片。利用光学显微镜和原子力显微镜对所得到的纳米片进行了形貌及厚度的表征,利用激光共聚焦拉曼光谱仪,X-射线衍射仪,透射电子显微镜,X射线光电子能谱仪等表征手段确定纳米片是β-Ga2O3。将得到的β-Ga2O3纳米片制作成场效应晶体管,对其电学特性进行了探索。结果表明:β-Ga2O3纳米片为矩形或平行四边形,最薄为8nm;纳米片是高质量的单斜晶体,Ga和O比例接近于化学计量比。β-Ga2O3是n型半导体,制备的晶体管开关比最高达108,亚阈值摆幅为150mVdec-1,电子迁移率为10cm2V-1s-1。
关键词: 二维材料 化学气相沉积 β-Ga2O3 超宽带隙半导体
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Preparation and characterization of two-dimensional β-Ga2O3 nanosheets
Abstract:In this paper, Ga2O3 crystals were firstly obtained by thermally evaporating gallium in argon contained trace oxygen, and then Ga2O3 nanosheets were obtained by using a special collection method. The morphology and thickness of the obtained nanosheets were characterized by optical microscope and atomic force microscope, and the nanometer determined was β-Ga2O3 by the characterization methods such as laser confocal Raman spectrometer, X-ray diffractometer, transmission electron microscope, X-ray photoelectron spectrometer, etc. The obtained β-Ga2O3 nanosheets were fabricated into field-effect transistors, and their electrical characteristics were explored. The results show that the β-Ga2O3 nanosheets are rectangular or parallelograms, and the thinnest is 8nm; the nanosheets are high-quality monoclinic crystals, and the ratio of Ga to O is close to the stoichiometric ratio. β-Ga2O3 is an n-type semiconductor. The fabricated transistor has a switching ratio of up to 108, a subthreshold swing of 150mVdec-1, and an electron mobility of 10cm2V-1s-1.?
Keywords: Two-dimensional materials chemical vapor deposition β-Ga2O3nanosheets Ultrawide bandgap semiconductor
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