Study on optical and electrical properties of boron thermal diffusion doped 6H-SiC single crystal

• 1、School of Microelectronics, Dalian University of Technology, Dalian 116620

Abstract：In this paper, high resistance 6H-SiC single crystal was doped with boron by thermal diffusion method in the temperature range of 1250 ℃ ~ 1450 ℃. The effects of different temperatures on the optical and electrical properties of borondoped high resistance 6H-SiC single crystal were studied. Compared with the undoped 6H-SiC single crystal, the transmission spectrum test results show that the light absorption of the 6H-SiC single crystal in the 400～800 nm band increases after boron diffusion, and the absorption edge shifts to the long wavelength direction. The resistivity of 6H-SiC single crystal after boron diffusion was measured by the van der Pauw method. The calculation results show that the surface resistivity of 6H-SiC lying flat with spacing diffusion in an oxygen atmosphere of 1250℃ and activated in an oxygen atmosphere of 1450℃ is about 1 kΩcm, which is 4 orders of magnitude lower than that of the undoped single crystal sample.

Keywords： Microelectronics and Solid State Electronics 6H-SiC Thermal Diffusion Boron Doping Electrical Properties Optical Properties