Resonant field electron emission was observed from amorphous diamond thin film. An ultrathin, i.e. ∼2 nm, amorphous diamond thin film highly localize on a single sharp Si tip apex was used for the experiments. Tip specimens were fabricated by state‐of‐the‐art microfabrication techniques, including high‐resolution electron beam lithography, plasma dry etching and local amorphous diamond deposition on the tip apex. It was observed from current–field (I–E) characteristics that in the applied macro‐field of typically 11–12 MV m−1 there are reversible and relatively strong current peaks, in contrast to the normal current instability phenomenon. The results confirm the effect of resonant tunnelling from amorphous diamond thin films. Copyright © 2004 John Wiley & Sons, Ltd.