We report the featured gated field electron emission devices of Si nano-tips with individually integrated Si nano-channels and the interpretation of the related physics. A rational procedure was developed to fabricate the uniform integrated devices. The electrical and thermal conduction tests demonstrated that the Si nano-channel can limit both the current and heat flows. The integrated devices showed the specialties of self-enhancement and self-regulation. The heat resistance results in the heat accumulation at the tip-apex, inducing the thermally enhanced field electron emission. The self-regulated effect of the electrical resistance is benefit for impeding the current overloading and prevents the emitters from a catastrophic breakdown. The nano-channel-integrated Si nano-tip array exhibited emission current density up to 24.9 mA/cm2 at a gate voltage of 94 V, much higher than that of the Si nano-tip array without an integrated nano-channel. This work was supported in part by the projects from the National Key Basic Research Program of China (Grant No. 2013CB933601), the National Natural Science Foundation of China (Grant No. 51272293), the Science and Technology and Information Department of Guangzhou City (Grant No. 201607020012), the SYSU-CMU Shunde International Joint Research Institute (20150201), and The Fundamental Research Funds for the Central Universities of China (15lgjc25).