Buried SiC layers were formed by dual-energy implantation of carbon into silicon at 40 and 65 keV to doses of 6×1017 and 1.2×1018cm-2, respectively. Annealing was performed at temperatures from 600℃ to 1200℃ for various time intervals in nitrogen. The phase transformation characteristics in these SiC layers were studied using FTIR spectroscopy and a de-convolution scheme of the IR spectra into amorphous SiC and b-SiC components. The b-SiC fraction in the as-implanted samples was found to depend signi®cantly on the order of the dual-energy implantation as a result of the IBIC effiect. Further evolution of the relative amount of the various SiC phases upon annealing could well be described by the classical nucleation and growth theory using a two-dimensional growth model. The overall enthalpy of the transformation was determined to be 0.28 eV/atom.