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Spectroscopic ellipsometry study of SiC/Si heterostructures formed by high-dose C+ implantation into silicon
Solid State Communications 116(2000)177-180，-0001，（）：
SiC/Si heterostructures formed by C+ implantation into Si with different implant energy (35 and 65keV) were studied by spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (XTEM). The measured SE spectra (2.3-5.0eV) were analyzed with appropriate multi-layer models and the Bruggeman effective medium approximation (B-EMA). The results showed that the measured spectra could be well simulated by using a multi-layer structure model. The thickness and composition of the layers were determined. Optical constants (n and k values) of the buried b-SiC formed by ion beam synthesis in photon energy of 2.3-5.0eV were
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