Photoluminescence from β-SiC nanocrystals embedded in SiO2 films at room temperature has been studied. Theβ-SiC nanocrystals were formed by carbon implantation into Si substrate at 35 keV with various dose, followed by postimplantation annealing at 1200℃ for 30min in Ar ambient. Thermal dry-oxidation of the annealed samples at 1050℃ for 3h was performed to formβ-SiC nanocrystals embedded in SiO2 films. The composition and chemical state of C and Si atoms were characterized by non-Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy, respectively. FTIR results show thatβ-SiC nanocrystals were formed in SiO2 films, and the amount ofβ-SiC nanocrystals in SiO2 films increases with increasing of implanted dose. The photoluminescent properties of the samples were measured at room temperature with a Hitachi F4010 fluorescence spectrophotometer using a xenon lamp as an excitation source (300nm). Two distinguishable PLbands located at around 460 and 535nm were observed in all the samples. The PLintensity significantly depends the implanted dose, and there is a critical implanted dose of 2×1017cm-2, at which the PLintensity reaches the largest value.