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Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source
Thin Solid Films 426(2003)1-7,-0001,():
High dose carbon implantation into silicon to form a β-SiC buried layer has been performed by using a metal vapor vacuum arc ion source. The implantation energy and dose are 65 keV and 1=1018 ions cmy2, respectively. Post-implantation thermal annealing was carried out at 1250℃ for various time intervals in Ar ambient. The composition depth profile, chemical state of C and Si atoms, microstructure and optical properties of the samples have been studied using X-ray photoelectron spectroscopy, Fourier transform IR spectroscopy, cross-section transmission electron microscopy and spectroscopic ellipsometry. For the asimplanted sample, the carbon depth profile shows a Gaussian shape-like distribution with a maximum concentration exceeding the stoichiometric ratio. A clear redistribution of the implanted carbon from the Gaussian shape-like distribution to the two sides is observed during annealing. After annealing at 1250℃ for 10h, a stoichiometric SiC buried layer of approximately 150nm is formed. Results show the annealed sample is a multi-layered structure of SiO2 surface layerySi top layerydamaged Si layeryupper interface layeryb-SiC buried layerylower interface layer on Si substrate. The optical constants of theβ-SiC buried layer formed by ion beam synthesis are determined from simulation of the measured ellipsometric spectra (2.3-5.0eV) using an appropriate multi-layered model and the Bruggeman effective medium approximation.
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