SiC layers were formed by implantation of C+ into silicon at 35keV to fluence of 1×1018cm-2. Thermal annealing was performed at 900℃ for various time intervals from 1h to 8h, and at various temperatures from 700℃ to 1200℃ for 2h in nitrogen ambient. The phase transformation characteristics in these SiC layers were studied using FTIR spectroscopy and a de-convolution scheme of the IR spectra into amorphous SiC and b-SiC components. Further evolution of the relative amount of the various SiC phases upon annealing could be well described by classical nucleation and growth theory using a three-dimensional growth model. The overall enthalpy of the transformation was determined to be 0.18eV/atom. A three-dimensional growth model was suggested according to the XPS experimental results of redistribution of the implanted carbon during annealing.