提示
陈培毅
-
47浏览
-
0点赞
-
0收藏
-
0分享
-
77下载
-
0评论
-
引用
期刊论文
Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and Si BJT
RARE METALS Vol. 22, No.1, Mar 2003, p. 69，-0001，（）：
was studied as a function of reactor fast neutron radiation fluence. After neutron irradiation, the collector current Ic and the current gain β decrease, and the base current Ib increases generally for SiGe HBT. The higher the neutron irradiation fluence is, the larger Ib increases. For conventional Si BJT, Ic and Ib increase as well as β decreases much larger than SiGe HBT at the same fluence. It is shown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.
【免责声明】以下全部内容由[陈培毅]上传于[2005年02月25日 19时48分07秒]，版权归原创者所有。本文仅代表作者本人观点，与本网站无关。本网站对文中陈述、观点判断保持中立，不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考，并请自行承担全部责任。
本学者其他成果
同领域成果
