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期刊论文
Optimum Doping Profile of Power MOSFET Epitaxial Layer
IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. ED. 29. NO.6 JUNE 1982,-0001,():
The epitaxial layer resistance of a Mosfet can be slightly reduced by using an oprimum doping protile. Which exhibits a mini-mum in the upper half of the layer when the layer thickness is large compared to the cell-to-cell spacing. A gradual transition from the nepitaxial layer to the n+ subsuase is desirable. When conent spreading is significant. The resistance may rise ad V52 rather than Vb25.
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