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THEORY OF OPTIMUM DESIGN OF REVERSE-BIASED p-n JUNCTIONS USING RESISTIVE FIELD PLATES AND VARIATION LATERAL DOPING

陈星弼X.B.CHEN. B. ZHANG and Z.J. LI

Solid-State Electronics VOL.35, No.9.pp. 1365-1370. 1992,-0001,():

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摘要/描述

The effect of the reduction of the peak fild at the deges of reverse-biased p-n junctions by the resistive field pcale (RFP) and varation lateral doping (VLD) is explained with the surface charges induced by their structures. Analytical solutions of the field profile under the RFP and under the CLD were found. From which the optimujm doping profile of the VLD can also be found. The relations between the breakdown voltage and surface depletion width for these two structures are proposed. The realization of the optimum YLD by an approach using multiple multiple zones of the JTE IS to be satisfactory.

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