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陈星弼

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期刊论文

Optimization of the Drift Region of Power MOSFET's with Lateral Structures and Deen

陈星弼X.B CHEN Z. Q. SONG. AND Z. J. JJ

IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL ED-34, NO.11, NOVEMBER 1987,-0001,():

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摘要/描述

The electric field profile in the drift region of power MOSFET's with lateral structures and deep junctions been found analytically. From the analysis, the best uniform surface doping den-sity and the depth of the drift region in offset-gate power Mosfet's that introduces the minimum seies resistance and sustains a given junction breakdown voltage is derived. Design guidelines for such MOSFET's are proposed. The comparison with computer simulation results bas shown that it is reasonable for some practical structures.

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