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期刊论文

New "silicon limit" of power device

陈星弼Xing-Bi Chen* Hong-Qiang Yang Min Cheng

Solid-State Electronies 46(2002)1185-1192,-0001,():

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摘要/描述

The hexagonal pattern of the voltage-sustaining layer in the COOLMOST with p-region in the center of cach unicell, which produces the lowest specific on-resistance, is studied based on a technologically achievable minimum aspec ratio of the width of each region to the thickness of the voltage-sustaining layer. A breakdown voltage higher than th previouw result is also achieved by breaking the requirement of the different peak fields to be equal. Futhermore, thdoping of the p-region near the drain is modified to get a better result It is believed that this is the new theoretica "Silicon Limit". The results show that a value Of Ron less than 1/3 of the previous one is obtained. Theoretical analysis given and shows in good agreement with the numerical simulation.

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