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期刊论文
Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC
JOURNAL OF RARE EARTHS Vol. 24, Spec. Issue, Mar., 2006, p. 19，-0001，（）：
Growth of SiCGe temary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon source, respectively, while H2 was employed as the carner gas. To reduce the heavy lattice mismatch between the film and the substrate, a 3C-SiC buffer layer was inserted between them in a CVD process. Optimizing the growth conditions was discussed. The samples were measured by means of SEM, SAXRD (Small Angle X-Ray Diffraction). It is shown that use of the 3C-SiC buffer layer is an effective way to improve quality of the ternary alloy.
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