您当前所在位置: 首页 > 学者

陈治明

  • 19浏览

  • 0点赞

  • 0收藏

  • 1分享

  • 31下载

  • 0评论

  • 引用

期刊论文

Liquid phase epitaxial growth of 3C-SiC films deposited on Si

陈治明Zhiming Chen Jianping Ma Gang Lu Tianmin Lei Mingbin Yu Lianmao Hang Xianfeng Feng

Z. Chen et al. Biamond and Related Materials 10 (2001) 1255-1258,-0001,():

URL:

摘要/描述

In this paper, we present a novel method to grow 3C-SiC crystal in a liquid-phase epitaxy-like manner, but without any substantial substrate. The starting material to be used in this method is the 3C-SiC-thin film deposited on Si substrate in a gas-phase heteroepitaxial technology. The free 3C-SiC film which remained of the molten Si substrate epitaxially grows up from the Si solution saturated by SiC in a highly purified graphite crucible heated by an inductive heater. XRD, XPS and Raman spectroscopy were used to characterize the samples. The only one peak with full width at half maximum (FWHM) of 0.2 at 20 = 35.65

【免责声明】以下全部内容由[陈治明]上传于[2007年05月31日 11时56分46秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

我要评论

全部评论 0

本学者其他成果

    同领域成果