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陈治明

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期刊论文

Epitaxial monocrystalline SiC films grown on Si by HFCVD at 780

陈治明Zhang Zhiyong Zhao Wu Wang Xuewen Lei Tianming Chen Zhiming Zhou Shuixian

Z. Zhiyong et al. Materials Science and Engineering B75 (2000) 177-179,-0001,():

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摘要/描述

In this paper, our work is reported on heteroepitaxial monocrystalline SiC films deposited on single-crystalline (111) silicon by hot filament chemical vapor deposition (HFCVD) with a gas mixture of methane, silane and hydrogen at a low temperature of 780℃. The surface micrography and thickness of SiC films on Si (111) substrate were analyzed by scanning electron microscopy (SEM). The characteristics and crystallinity of the SiC film were examined by X-ray diffrac tometer (XRD), transmission electron microscopy (TEM) and auger electron spectrum (AES). The peaks of Si (111), SiC (111) and SiC (222) planes were observed on the X-ray diffraction spectrum, but not the peaks of the SiC (200) or SiC (220) planes. The diffraction pattern of TEM also indicates that the SiC films are single-crystalline structure. AES shows that the element ratio of silicon and carbon in the SiC film is 1:1.004. The preparation conditions were as follows: a filament temperature of 2100℃, substrate temperature of 780°C, hydrogen flow rate of 100 sccm, methane concentration of 8.0%, silane concentration of 1.0% and a reaction pressure of 150 Pa.

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