您当前所在位置: 首页 > 学者

陈治明

  • 35浏览

  • 0点赞

  • 0收藏

  • 0分享

  • 30下载

  • 0评论

  • 引用

期刊论文

Light induced luminescence centers in porous SiC prepared from nano-crystalline SiC grown on Si by hot filament chemical vapor deposition

陈治明Z.M. Chen J.P. Ma M.B. Yu J.N. Wang W.K. Ge P.W. Woo

Z. M. Chen et al. Materials Science and Engineering B 75 (2000) 180-183,-0001,():

URL:

摘要/描述

Intense photoluminescence (PL) was observed at room temperature from porous SiC samples prepared in electrochemical anodization from nano-crystalline SiC thin films grown on Si (100) substrates by hot filament chemical vapor deposition. Raman scattering spectroscopy and high-resolution transmission electron microscopy confirmed the nano-crystalline structure of the host films. For the porous samples formed under weaker anodization conditions, it was found that prolonged irradiation with ultraviolet (UV) light from a He-Cd laser (325nm, 10mW) can induce an enhanced new PL band and change the peak energy from 1.9eV to 2.1eV at room temperature. A defect model is suggested to explain the UV light induced PL change in porous SiC.

版权说明:以下全部内容由陈治明上传于   2007年05月31日 11时57分36秒,版权归本人所有。

我要评论

全部评论 0

本学者其他成果

    同领域成果