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陈治明

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Light induced luminescence centers in porous SiC prepared from nano-crystalline SiC grown on Si by hot filament chemical vapor deposition

陈治明Z.M. Chen J.P. Ma M.B. Yu J.N. Wang W.K. Ge P.W. Woo

Z. M. Chen et al. Materials Science and Engineering B 75 (2000) 180-183,-0001,():

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摘要/描述

Intense photoluminescence (PL) was observed at room temperature from porous SiC samples prepared in electrochemical anodization from nano-crystalline SiC thin films grown on Si (100) substrates by hot filament chemical vapor deposition. Raman scattering spectroscopy and high-resolution transmission electron microscopy confirmed the nano-crystalline structure of the host films. For the porous samples formed under weaker anodization conditions, it was found that prolonged irradiation with ultraviolet (UV) light from a He-Cd laser (325nm, 10mW) can induce an enhanced new PL band and change the peak energy from 1.9eV to 2.1eV at room temperature. A defect model is suggested to explain the UV light induced PL change in porous SiC.

【免责声明】以下全部内容由[陈治明]上传于[2007年05月31日 11时57分36秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

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