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陈治明

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Ultraviolet-light-enhanced luminescence in SiC thin films grown on Si by hot filament chemical vapor deposition and ultraviolet-light-induced luminescence in anodized SiC

陈治明J. N. Wang Z. M. Chen P. W. Woo W. K. Ge Y. Q. Wang M. B. Yu

APPLIED PHYSICS LETTERS VOLUME 74, NUMBER 7, 15 FEBRUARY 1999,-0001,():

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摘要/描述

Intense wide-band photoluminescence (PL) was observed at room temperature from both SiC thin films grown on silicon substrates by hot-filament chemical vapor deposition and anodized SiC thin films formed by electrochemical anodization in HF-ethanol solution. It was found that prolonged irradiation with ultraviolet light from a He-Cd laser (325nm, 10mW) generally enhanced the PL intensity of as-grown SiC but induced a new PL band in anodized SiC at room temperature. The light-induced PL emission in anodized SiC was centered at the energy between 2.1 and 2.2eV in comparison with the initial peak position of about 1.9eV. These effects were also temperature dependent.

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