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陈治明

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期刊论文

A new design of the SiC light-activated Darlington power transistor

陈治明Z.M. Chen H.B. Pu Z. Lu. P. Ren

Z. M. Chen et al. Microelectronic Engineering 83 (2006) 189-192,-0001,():

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摘要/描述

A SiC light-activated Darlington heterojunction transistor is proposed for anti-EMI (electromagnetic interference) applications, in which a monolithically integrated SiCGe/SiC pn heterojunction photodiode is employed to produce a light-induced base current for triggering the transistor. Performance of the proposed light-activated power switch was simulated using MEDICI tools. Feasibility of the proposal is confirmed by its good light-activation characteristics obtained from the simulation. The simulation also demonstrates that good I-V characteristics with a light-independent turn-on voltage knee of about 5 V may be achievable to the light-activated power switch has.

【免责声明】以下全部内容由[陈治明]上传于[2007年05月31日 11时17分31秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

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