Room temperature H S sensing properties and mechanism of-CeO -SnO sol-gel thin films-2，成果详细信息-中国科技论文在线

方国家

43浏览
0点赞
0收藏
0分享
46下载
0评论
引用

期刊论文

Room temperature H S sensing properties and mechanism of-CeO -SnO sol-gel thin films-2

方国家， Guojia Fang a ， b ， ) ， Zuli Liu a ， Chuanqing Liu b ， Kai-lun Yao a ， c

Sensors and Actuators B 66 2000. 46-48，-0001，（）：

URL:

摘要/描述

Using non-alkoxide SnCl2P2H2O, CeNH4.2NO3.6as precursors, room temperature H2S gas sensitive CeO2-SnO2thin films have been obtained. In this paper, the synthesis process of CeO2-SnO2 thin films has been introduced; the gas sensing properties of the CeO2-SnO2 thin films were investigated and compared with those of SnO2and ZrO2-SnO2 thin films. The experiments illustrate that CeO2-SnO2 thin film has quite a quick response and recovery behavior, high selectivity, and has better sensitivity than that of ZrO2-SnO2thin film toward low concentration of H2S at room temperature. The sensing mechanism of CeO2-SnO2thin films toward H2S at room temperature has also been discussed in this paper.

关键词: Gas sensing properties ， CeO2-SnO2 thin film ， Room temperature ， Sol-gel technique

问答

暂无问题，成为第一个提问者

我要提问全部问题

【免责声明】以下全部内容由[方国家]上传于[2009年03月24日 09时59分05秒]，版权归原创者所有。本文仅代表作者本人观点，与本网站无关。本网站对文中陈述、观点判断保持中立，不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考，并请自行承担全部责任。

我要评论

全部评论 共 0 条

本学者其他成果

同领域成果