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期刊论文

Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

方国家Chun Lia Guojia Fanga* Su Shenga Zhiqiang Chena Jianbo Wangb Shuang Maa Xingzhong Zhaoa

Physica E 30(2005)169-173,-0001,():

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摘要/描述

Arrays of aligned silicon nanowire (SiNW) were synthesized on a silicon (100) substrate by self-assembling electroless nanoelectrochemistry. Compared with that of bulk crystal silicon, the first-order Raman peak of the silver cap-removed SiNW arrays shows a downshift and asymmetric broadening due to the phonon quantum confinement effects, and intensity enhancement. Field electron emission from the SiNWs was also investigated. The turn-on field was found to be about 12 V/mm at a current density of 0.01 mA/cm2. These highly densified and ordered SiNW arrays can be expected to have favorable applications in vacuum electronic or optoelectronic devices.

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