提示
冯士维
-
29浏览
-
0点赞
-
0收藏
-
0分享
-
76下载
-
0评论
-
引用
期刊论文
Lowresistance Ti/Al/Ti/Au multilayer ohmic contact to nGaN
JOURNAL OF APPLIED PHYSICS VOLUME 89, NUMBER 11 1 JUNE 2001，-0001，（）：
A metallization scheme has been developed for obtaining low ohmic contacts to nGaN with a low contact resistance. The metal contact is a Ti/Al/Ti/Au composite with layers that are respectively 30, 100, 30, and 30 nm thick. Contacts with a specific contact resistivity r s, as low as 6.0 31027 V cm2 for a doping level of 1.4031020 cm23 were obtained after annealing the sample for 30 s at 750℃ in a rapid thermal annealer. The Ti placed on top of the traditional Ti/Al contact appears to have the advantage of tying up the excess Al; therefore it does not form a mottled contact. Some of the additional Ti-Al intermetallic alloys that are formed also have beneficial effects. The Ti-Au layer forms a robust upper portion of the composite, which enables the contacts to have hightemperature applications.
【免责声明】以下全部内容由[冯士维]上传于[2009年06月30日 15时04分14秒]，版权归原创者所有。本文仅代表作者本人观点，与本网站无关。本网站对文中陈述、观点判断保持中立，不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考，并请自行承担全部责任。
本学者其他成果
同领域成果
