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期刊论文

Si3N4/SiC interface structure in SiC-nanocrystal-embedded a-Si3N4 nanorods

高义华Y.H. Gaoa) Y. Bando K. Kurashima and T. Sato

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摘要/描述

Si3N4/SiC interface structure in SiC-nanocrystal-embedded a-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded a-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., Si3N4, and nearly (111)SiC//(1010)Si3N4 with low-angle discrepancy of either 3

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版权说明:以下全部内容由高义华上传于   2009年12月03日 21时19分17秒,版权归本人所有。

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