PSpice models for power semiconductor switching devices, which include the gate turn-off thyristor, the insulated gate bipolar transistor and the mos-controlled thyristor, are presented. These models are suitable for time domain circuit simulation packages which incorporate bipolar transistor and metal oxide semiconductor field effect transistor models. The models presented are composite models, being built-up from these two basic switching components. Simulation, experimentation results and parametric sensitivity analysis validate the in-circlrit performance of the proposed composite models. The presented model:; are meant for applications where circuit level :simulated performance is of primary importance, rather than accurate prediction of device microscopic electrical haracteristics.