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Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
D. Huang et al. I Solid-State Electronics 45(2001)711-715，-0001，（）：
Measured and calculated (without any adjustable material parameter) electron Hall mobility and carrier concentration in the range of 26.5-73K are reported for a high-mobility free-standing bulk GaN grown by hydride vapor phase epitaxy. The peak electron mobility of 7386cm2/Vs at 48K and a value of 1425cm2/V s at 273K were measured. An iterative solution of the Boltzmann equation was applied to calculate the mobility using the materials parameters either measured on the sample under study or recent values that are just becoming available with only the acceptor concentration being variable. Using only one donor and one conducting layer system, the donor and acceptor concentrations of 1.76
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