We present a self-aligned, 0.18μm emitter width SiGe HBT with fv of90GHz, fMAX of 90GHz (both at VDB=0.5V), NFMIN of 0.4dB, and BVcEo of 2.7V. We also demonstrate that this device is integrable with IBM's 0.18μm, 1.8/3.3V copper metallization CMOS technology with little effect on the CMOS device properties and design rules. Emerging high-frequency applications, such as 40Gb/s SONET and software radios are driving an increase in RF technology requirements to beyond prior-generation production SiGe HBT 50GHz fT values. Furthermore, today's I-2 GHz wireless applications continue to drive technologies to lower noise and lower power while demanding the low cost of silicon. Whereas>100GHz fT SiGe HBTs have been reported in the literature, the overall integration of such devices into manufacturable, self-aligned, BiCMOS integrated processes, achieving simultaneously high speed, low noise, and low power has not been reported to date. Both lateral and vertical HBT scaling are employed to improve performance over prior generation IBM SiGe BiCMOS technologies [1][2]. The parametric comparison between generations of IBM HBT is described in Table 1. With improved lithography available through the base CMOS technology, critical device areas are shrunk between technology generations (Fig. 1). Benefits are reduced parasitics and significantly decreased base resistance [3]. Reduced parasitics are essential for commensurate improvements in fMAX when fT is improved as a result of device vertical scaling. In vertical scaling, the base profile and collector depletion regions are significantly narrowed, resulting in improved transit times from prior generation SiGe HBT designs (Fig. 2). The germanium width is decreased with the base width, allowing the germanium profile to be modified for improved device performance without increased strain and associated yield concerns. Furthermore, the collector concentration is increased in order to push out the Kirk effect to higher current densities, resulting in further improvements in fT and fMAX, with peak values occurring at approximately 4mA/μm2.