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黄风义

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EPITAXIAL SiGeC/Si PHOTODETECTOR WITH RESPONSE IN THE 1.3-1.55μm WAVELENGTH RANGE

黄风义F.Y. Huanga) Shawn G. Thomas Michael Chu Kang L. Wang

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摘要/描述

We demonstrate a Si-based photodetector with a response in the 1.3-1.55μm wavelength range. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 A. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-gin long waveguide is 0.2% at 1.55μm, and 8% at 1.3 gin. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55μm wavelength range.

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版权说明:以下全部内容由黄风义上传于   2005年01月28日 21时43分39秒,版权归本人所有。

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