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期刊论文

Growth defects in #ux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography Abstract

胡小波X.B. Hu a* J.Y. Wang a W.H. Cui a Q.C. Guan a R.B. Song a J.Q. Wei a Y.G. Liu a J.H. Jiang b Y.L. Tian b

Journal of Crystal Growth 205(1999)323-327,-0001,():

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摘要/描述

The growth defects in #ux grown RbTiOAsO 4 crystal have been investigated by white-beam synchrotron radiation topography. It is found that growth sector boundaries are the primary growth defects and they show strong X-ray kinematical contrast in the topograph. All the dislocations are growth induced and appear only in the near capping region. The area away from the capping region is nearly dislocation free. Growth bands show weak contrast in the X-ray topograph, which implies that the impurity contents are relatively low in various growth sectors and each growth sector is uniform in composition. (1999 Elsevier Science B.V. All rights reserved.

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