The Fe nitride fiims were easily produced by facing targets sputtering (FTS). The structures and magnetic properties of the films depend on the reactive pressure (PN) and dc substrate biasing voltage (Vb)o α-Fe, α"-Fe16N2, γ-Fe4N, ε-Fe3N, and ζ-FezN as well as the amorphous FeN phase have been produced at the PN ranges of 0-8～10-3 Torr. The magnetic moment per iron atom increases with PN until PN=1.O mTorr at which the α'-Fe16N2 phase appears with the coercive force Hc=103A/m, susceptibility γ=161, and μs=2.85 μB. The relation between conductivty and temperature σ-T indicates that Fe nitride films resemble a semiconductor. The Curie temperature of these films is reduced with the increase of PN. Magnetic relaxation phenomena were observed in the vicinity of 540℃.