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蒋庄德

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期刊论文

A novel high temperature pressure sensor on the basis of SOI layers

蒋庄德Zhao Yulong∗ Zhao Libo Jiang Zhuangde

Sensors and Actuators A 108(2003)108-111,-0001,():

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摘要/描述

The principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed. A novel structure of the sensors for harsh environment is designed. In particular, the high temperature pressure sensors were used in: automotive industry, aviation engineering, as well as in oil fields, industrial measurement and control systems. The sensor could be used in 200℃ environment, and could endure the impact of instances high temperature (about 1000, and less than 0.5s) because of it's mechanical structure of cantilever bonded with SOI strain gauge. The test data of the sensor is obtained, and the result is satisfied.

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