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期刊论文

Femtosecond laser-induced ZnSe nanowires on the surface of a ZnSe wafer in water

贾天卿Tianqing Jiaab* Motoyoshi Babaa Min Huangb Fuli Zhaob Jianrong Qiuc Xiaojun Wub Masaki Ichiharaa Masayuki Suzukia Ruxin Lic Zhizhan Xuc Hiroto Kurodaa

Solid State Communications 141 (2007) 635-638,-0001,():

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摘要/描述

We present a simple route for ZnSe nanowire growth in the ablation crater on a ZnSe crystal surface. The crystal wafer, which was horizontally dipped in pure water, was irradiated by femtosecond laser pulses. No furnace, vacuum chamber or any metal catalyst were used in this experiment. The size of the nanowires is about 1-3μm long and 50-150nm in diameter. The growth rate is 1-3μm/s, which is much higher than that achieved with molecular-beam epitaxy and chemical vapor deposition methods. Our discovery reveals a rapid and simple way to grow nanowires on designed micro-patterns, which may have potential applications in microscopic optoelectronics.

【免责声明】以下全部内容由[贾天卿]上传于[2009年12月21日 18时44分37秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

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