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Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF2 crystals

贾天卿T.Q. Jia H.X. Chen M. Huang and F.L. Zhao X.X. Li S.Z. Xu H.Y. Sun D.H. Feng C.B. Li X.F. Wang R.X. Li and Z.Z. Xu X.K. He and H. Kuroda

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摘要/描述

The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength λ in the region of 250-800nm, while it is nearly a constant for 800<λ<2000nm. The ultrafast electronic excitation is also studied by a pump and probe method. The reflectivity increases rapidly in the latter half of pump pulse, which supports that impact ionization plays an important role in the generation of conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band sub-CB transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.

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【免责声明】以下全部内容由[贾天卿]上传于[2009年12月21日 18时45分43秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

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