High resolution Laplace defect spectroscopy was used to study the fine structure of the electron emission process of DXSn! centers in AlxGa12xAs (x50.26,0.53). Two groups of peaks in the spectra of electron emission rates were found to correspond to two DX-like centers observed by deep level transient spectroscopy. The line splitting in both groups derives from the alloy disorder effect attributed to the different local configurations of Al and Ga atoms around two DX-like centers. Experimental evidence for the microscopic nature of two DX-like centers in Sn-doped AlGaAs is provided.