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期刊论文
Floating Gate Memory‐based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics
Small，2014，11（2）：208-213 | 2014年08月13日 | https://doi.org/10.1002/smll.201401872
Charge trapping layers are formed from different metallic nanocrystals in MoS2‐based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 105 and a long retention time of 10 years.
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