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期刊论文
Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors
Adv. Mater. ，2014，26（36）：6255-6261 | 2014年07月28日 | https://doi.org/10.1002/adma.201402008
Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near‐ideal sub‐threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date.
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