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李宝军
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期刊论文
1.55μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect
Appl. Phys. Lett., Vol. 75, No.1, 5 July 1999，-0001，（）：
Based on total internal reflection and plasma dispersion effect, a SiGe/Si asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated. The switch performance is measured at the wavelength of 1.55μm. A modulation depth of 90% at an injection current of 110mA is obtained, and the switching time is about 0.2μs. The device reaches a maximum optical switching at the injection current of 120mA. The extinction ratio is larger than 34dB and the crosstalk and insertion loss are less than -18.5 and 2.86dB, respectively.
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