Investigation of flow pattern defects in as-grown and rapid thermal annealed CZSi wafers，成果详细信息-中国科技论文在线

刘彩池

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Investigation of flow pattern defects in as-grown and rapid thermal annealed CZSi wafers

刘彩池， Jianfeng Zhang a ， * ， Caichi Liu a ， Qigang Zhou b ， Jing wang b ， Qiuyan Hao a ， Hongdi Zhang a ， Yangxian Li a

Journal of Crystal Growth 262(2004)1-6，-0001，（）：

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摘要/描述

The flow pattern defects (FPDs) in as-grown and rapid thermal annealed <100> boron-doped CZSi wafers were investigated in this paper. The experimental results showed that a hole occurred on the apex of FPDs observed by atomic force microscope. The changes in the number and the size of the FPDs in as-grown and annealed wafers were measured by optical microscope after etching in Secco etchant. The size of FPDs became smaller, the density of FPDs reduced above 1100℃ annealing and became very low above 1200℃ annealing in an Ar atmosphere; the hole on the apex became shallower and larger. This mechanism was discussed.

关键词: A1 ， Atomic force microscopy; A1 ， Crystal structure; A1 ， Defects; A2 ， Czochralski method; A2 ， Single crystal growth; B1 ， Elemental solids

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