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期刊论文
3D global analysis of CZ–Si growth in a transverse magnetic field with various crystal growth rates
Journal of Crystal Growth 275(2005)e1521-e1526,-0001,():
A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt–crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly twodimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely.
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