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刘建军
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Binding energy of neutral bound excitons in GaAs-AlxGa1-xAs quantum wells
PHYSICAL REVIEW B VOLUME 55， NUMBER 3 15 JANUARY 1997-I，-0001，（）：
The binding energy of an exciton bound to a neutral donor (D0,X) in a GaAs-AlxGa1-xAs quantum well is calculated variationally by using a two-parameter wave function. There is no artificial parameter added in our calculation. Our results agree fairly well with previous experimental results, except that our position of the binding energy maximum is at about 15
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