An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N8-bis-1-naphthl!-N,N8-diphenyl-1,18-biphenyl-4,48-diamine (NPB) used as a hole transporter, undoped tris 8-quinolinolato! aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48000cd/m2 and 4.59lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices.