Completely <111>-textured Pb(Ta0.05Zr0.48Ti0.47)O3 (PTZT)films are grown on Pt/TiO2 /SiO2 /Si(001) substrates by pulsed-laser deposition using SrRuO3 as a buffer layer. It is argued that the small lattice-mismatch in (111) plane between Pt and SrRuO3 and the compatible perovskite structures for SrRuO3 and PTZT are responsible for the complete (111) orientation of PTZT films. The as-fabricated PTZT ferroelectric capacitor exhibits large remnant polarizations 1Pr518.4mC/cm2, and 2Pr5216.0mC/cm2, and very low leakage current as well. The excellent fatigue-resisting property of PTZT films in terms of the polarization degradation is demonstrated.