Pt/PbZr0.53Ti0.47O3 (PZT)/LaA1O3 (LAO)/Si and Pt/PbZr0.53Ti0.47O3/La0.85gr0.15CoO3 (LNCO)/LaAIO3/Ni structures forfen-oelectlic field effect memory applications were fabricated on n type Si substrate by pnlsed laser deposition (PLD). TheAnger electron spectrometry (AES) analysis shows that a LaAlO3 bnffer layer can effectively prevent Si and Ti, Pb int erdiffnsionbetween PZT and Si snbstrate. For both of the structure, the current density voltage measnrement shows a typical leakagecurrent density of about 10 7A/cm2 at 8V applied voltage. Furthermore, it has been demonstrated that the PbZro 53Ti04703/LaAlO/Si structures and Pt/PbZr0.53Ti0.4703/Lao85gro15CoO3[LaA103]gi structures exhibit felroelectric switching properties,showing a memory window as large as 2 and 2.9V, respectively, raider a ramp rate of 200mV/s from 6 to +6V driving voltageat lMHz. it is believed that the Lao ssSr0.15 CoO3 bufffer layer deposited on LaA103 layer can improve the crystalline propertiesof PZT fihns, and then resnlt in lager polarization of PZT and lager memory windows for Pt/PbZros3Tio 4703/La085Sr015C003/LaAlO/Si structures.